[9p-N302-1~6] 15.7 Crystal characterization, impurities and crystal defects

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[9p-N302-2] Analysis of inclined structure of threading screw dislocation in 4H-SiC using deep X-ray topography

〇Kotaro Ishiji¹, Akio Yoneyama¹, Isaho Kamata² (1.SAGA-LS, 2.CRIEPI)

Keywords:

X-ray topography,SiC crystal,Dislocation characterization

Using deep X-ray topography (deep XRT), which can observe deep inside the crystal, we observed threading screw dislocations (TSDs) in a SiC crystal. In deep XRT, the strain field of the TSD core-line was emphasized in the projection XRT image. The analysis procedure of the inclined structure of the real TSD from the projected image was presented, and the inclined angle and direction of the real TSD were estimated. Furthermore, we identified the mixed component of TSD and discussed the relationship between the inclined structure and mixed component.