Presentation Information
[9p-N302-6]Measurement of carbon concentration in silicon crystal/ Renaissance
(31) Behavior of CiOi and CiCs by electron irradiation and photoluminescence
〇Naohisa Inoue1, Shuichi Okuda1, Shuichi Kawamata1 (1.Osaka Metropolitan Univ. Radiation Research center)
Keywords:
silicon crystal,carbon concentration,optical characterization
In LSI period starting in 1975, oxygen was the most important impurity. In 2005, power device period started with the hybrid cars. Radiation induced carbon complex is used for lifetime control. More than 20 species react during the irradiation and annealing We measured and analyzed most of all by IR. Then reaction depends not only on total fluence but also, flux and duration. Oxygen, B and other impurities affect also. PL analysis is not so quantitative than IR. PL carbon concentration measurement is applied usually to restricted to concentration range of O and B, and to high resistivity.