[9p-N307-1~15] 6.6 Probe Microscopy

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[9p-N307-2] Dual Bias Modulation Electrostatic Force Microscopy on Cross-section of n-GaN/n-GaN Junction Fabricated by Surface-activated Bonding

〇Kohhei Mizutani¹, Sihan Wen¹, Daichi Kobayashi¹, Ryota Fukuzawa¹, Jianbo Liang³, Naoteru Shigekawa³, Takuji Takahashi^1,2 (1.IIS, Univ. Tokyo, 2.Nano Quine, Univ. Tokyo, 3.Osaka Metropolitan Univ.)

Keywords:

EFM,KFM,GaN