[9p-N321-1~17] 15.4 III-V-group nitride crystals

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N321-10] Ferroelectric properties of ScAlN films epitaxially grown on GaN by sputtering

〇Sawaki Sato¹, Yusuke Wakamoto², Takuya Maeda², Hiroshi Funakubo³, Kohei Ueno⁴, Hiroshi Fujioka⁴, Kazuhisa Ikeda¹, Atsushi Kobayashi¹ (1.Tokyo Univ. of Science, 2.The Univ. of Tokyo, 3.Institute of Science Tokyo, 4.IIS, The Univ. of Tokyo)

Keywords:

Ferroelectric materials,epitaxial growth,Sputtering