[9p-N321-1~17] 15.4 III-V-group nitride crystals

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[9p-N321-13] Fabrication and characterization of BGaN diodes under low Ⅴ/Ⅲ ratio conditions

〇ryohei kudou¹, Eito Kokubo², Katsuyuki Takagi³, Genichiro Wakabayashi⁴, Yoshio Honda⁵, Hiroshi Amano⁵, Yoku Inoue^1,6, Toru Aoki^1,3, Takayuki Nakano^1,3,6 (1.Shizuoka Univ., 2.Nagoya Univ., 3.R.I.E., 4.Kindai Univ., 5.IMaSS Nagoya Univ., 6.Shizuoka Univ. Eng.)

Keywords:

BGaN,neutron detector,semiconductor