[9p-N321-1~17] 15.4 III-V-group nitride crystals

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[9p-N321-2] Reduction of the Threading Dislocation Density in GaN Crystals During Facet Growth Induced by Adding Gallium Oxide in the Na Flux Method

〇Masayuki Imanishi¹, Kanako Okumura¹, Keisuke Kakinouchi¹, Mitsutoshi Ueda¹, Kenichi Kawabata¹, Kosuke Murakami¹, Shigeyoshi Usami¹, Yusuke Mori¹ (1.Grad. Sch. of Eng., The Univ. of Osaka)

Keywords:

Gallium nitride,Na-flux method,Gallium oxide

In this study, we investigated the reduction of dislocation density in GaN crystal growth via the Na flux method by employing facet growth. Facet formation was induced by introducing gallium oxide (Ga₂O₃) powder into a Ga–Na melt, thereby promoting dislocation reactions and annihilation. An evaluation of the growth mode and dislocation density of GaN crystals synthesized with Ga₂O₃ addition revealed that facet growth was effectively initiated at a Ga₂O₃ concentration of 0.6 mmol%. Consequently, the dislocation density, initially approximately 1.6×10⁶ cm^-2 in the seed crystal, was reduced to approximately 1.5×10⁵ cm^-2.