[9p-N321-1~17] 15.4 III-V-group nitride crystals

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[9p-N321-4] Growth of nitride nanocolumns with sub-200 nm pitch on Si(111) substrates via nanotemplate selective-area growth

〇Yugo Orima¹, Kota Hoshino¹, Rie Togashi¹, Katsumi Kishino¹ (1.Sophia Univ.)

Keywords:

InGaN