[9p-N321-1~17] 15.4 III-V-group nitride crystals

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N321-5] Growth of Si-doped GaN thin films by sputtering method

〇(M2)Akinori Saito¹, Riki Kanetake¹, Taiki Kobayashi¹, Naoomi Yamada¹ (1.Chubu Univ.)

Keywords:

GaN,Si doping,sputtering