[9p-N321-1~17] 15.4 III-V-group nitride crystals

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[9p-N321-9] Effect of Growth Temperature of ScAlN on Electrical Properties of ScAlN/AlGaN/AlN/GaN Heterostructures

〇Tomoya Okuda¹, Takuya Maeda², Takahiko Kawahara³, Kozo Makiyama³, Ken Nakata³, Kazuhisa Ikeda¹, Atsushi Kobayashi¹ (1.Tokyo Univ. of Science, 2.The Univ. of Tokyo, 3.Sumitomo Electric Industries)

Keywords:

ScAlN,GaN