[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-1] Systematic characterization of nitrogen-plasma treated SiC surface

〇Daiki Miura¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:

SiC,plasma nitridation,defect

To reduce the SiC/SiO2 interface states, nitridation methods using nitrogen-containing plasma have been proposed in addition to conventional NO nitridation. However, the mechanism behind the reduction of interface states is still unclear. In this study, the effects of plasma nitridation on the SiC surface were investigated. It was revealed that nitrogen-plasma treatment effectively introduces nitrogen atoms into SiC and forms Si-N bonds at the surface, but the treatment itself causes generation of various point defects.