Presentation Information

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-10]P_bC type-2 center (carbon dangling-bond center) at 4H-SiC(0001)/SiO₂ interface

〇(M2)Bunta Shimabukuro¹, Yusuke Nishiya², Sosuke Horiuchi¹, Mitsuru Sometani³, Hirohisa Hirai³, Heiji Watanabe⁴, Yu-ichiro Matsushita², Takahide Umeda¹ (1.Tsukuba Univ., 2.Quemix Inc., 3.AIST, 4.Osaka Univ.)

Keywords:

4H-SiC(0001),MOS-interface,Carbon dangling-bond defects

"P_bC center" was reported as Carbon dangling-bond center at 4H-SiC(0001)/SiO₂ interface. The energy levels of "P_bC center" are E_V + 0.6 eV for (+/0) and E_V + 1.2 eV for (0/-). On the other hand, we observed another carbon dangling-bond defect at 4H-SiC(0001)/SiO₂ interface and its energy level (E_V + 2.2 eV) by using Electrically Detected Magnetic Reasonance (EDMR) spectroscopy. The combination of EDMR spectroscopy and first principle calculation indicates this defect should be different type of P_bC center, namely "P_bC type2 center" .

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Presentation Information

[9p-N322-10]PbC type-2 center (carbon dangling-bond center) at 4H-SiC(0001)/SiO2 interface

Keywords:

[9p-N322-10]P_bC type-2 center (carbon dangling-bond center) at 4H-SiC(0001)/SiO₂ interface