[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-11] Shifts and Recovery of Device Characteristics in SiC-MOSFETs after Repetitive Turn-Off Switching-Induced Overvoltage Stress

〇(M2)Takumu Nakatani¹, M.S. Hassan², Shin-ichi Nishizawa², Wataru Saito² (1.Kyushu Univ. IGSES, 2.Kyushu Univ. RIAM)

Keywords:

SiC-MOSFET,overvoltage stress,leakage currents

SiC-MOSFETs are capable of high-speed switching operation, but large surge voltages are likely to occur due to parasitic inductance. Although variations in device characteristics caused by overvoltage stress have been reported through repeated UIS (Unclamped Inductive Switching) tests, the effects of mild stress, such as those expected in actual circuits, and the subsequent recovery behavior have not been sufficiently investigated. In this study, continuous switching tests accompanied by large surge voltages were conducted, and variations in the gate and drain leakage currents of SiC-MOSFETs, as well as their recovery behavior, are reported.