[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-17] Effect of conductivity type of SiC substrate on the formation process of color centers at SiO₂/SiC interfaces

〇Yu Kaneko¹, Takato Nakanuma¹, Haruko Toyama², Kosuke Tahara², Katsuhiro Kutsuki², Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka, 2.Toyota Central R&D Labs., Inc.)

Keywords:

SiC,Single photon emitter,MOS interface