[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-18] Optical properties of impurity-vacancy pairs in 4H-SiC from ab initio calculations

〇(D)Sosuke Iwamoto¹, Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka)

Keywords:

SiC,ab initio calculation,impurity defect