[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization

6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[9p-N322-20] Model for Z₁-dependent electronic stopping cross sections and its application to Si, C, 4H-SiC, Al, Ni, and Ag

〇Kazuhiro Mochizuki¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹, Fumimasa Horikiri¹ (1.Hosei Univ.)

Keywords:

ion implantation,electronic stopping cross section,Z1 oscillation