[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-3] Origin of mobility enhancement in SiC FinFETs through theoretical analysis of scattering mechanism

〇Shion Toshimitsu¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:

silicon carbide,carrier scattering mechanism,FinFET

To physically understand mobility improvement in SiC FinFETs, the carrier scattering mechanism in 4H-SiC n-channel FinFETs with various fin widths was theoretically analyzed. High mobility in SiC FinFETs is attributed to the reduction of Coulomb scattering and surface roughness scattering with decreasing the fin width. This experimental result can be explained by the lowering of potential energy across the fin due to the merger of depletion layers extending from both the sidewalls.