[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-4] Performance improvements of SiC MOSFETs by 2-step hydrogen annealing without nitridation

〇Hiroki Fujimoto¹, Takuma Kobayashi¹, Shinji Kamihata¹, Keiji Hachiken¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

SiC,MOS interface