[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-5] Improvement of SiC MOS structures by 2-step hydrogen annealing: Impact of hydrogen treatment on SiC surface

〇Satoshi Iga¹, Takuma Kobayashi¹, Hiroki Fujimoto¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

semiconductor,SiC MOS structures,interface states