[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-6] Improvement of SiC MOS structures by 2-step hydrogen annealing: Impact of post-deposition annealing

〇Keiji Hachiken¹, Takuma Kobayashi¹, Hiroki Fujimoto¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

SiC,Interface state density,Post deposition annealing