Presentation Information
[9p-N322-7]Thermal stability of SiC MOS structures formed by 2-step hydrogen annealing
〇Ryuto Kakoi1, Takuma Kobayashi1, Hiroki Fujimoto1, Masahiro Hara1, Heiji Watanabe1 (1.UOsaka)
Keywords:
semiconductor,SiC MOS structures,Thermal stability