Presentation Information

[9p-N322-7]Thermal stability of SiC MOS structures formed by 2-step hydrogen annealing

〇Ryuto Kakoi1, Takuma Kobayashi1, Hiroki Fujimoto1, Masahiro Hara1, Heiji Watanabe1 (1.UOsaka)

Keywords:

semiconductor,SiC MOS structures,Thermal stability