[9p-N324-1~19] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-12] Effect of first growth layer in nitrogen-doped diamond film synthesis by a two-step process using plasma-enhanced chemical vapor deposition

〇(M1C)Yuto Yonehara¹, Keigo Takeda¹, Mineo Hiramatsu¹ (1.Meijo Univ.)

Keywords:

microwave plasma-enhanced chemical vapor deposition,nitrogen-doped,diamond

Diamond has attracted attention as the ultimate semiconductor material due to its excellent insulating properties and high thermal conductivity, as well as its ability to exhibit semiconductor characteristics when doped with impurities. However, nitrogen-doped diamond (NDD), which exhibits n-type conductivity, has been considered difficult to synthesize because of the low efficiency of nitrogen doping and its tendency to alter the crystal structure. In this study, we investigated the effect of substrate conditions on nitrogen doping by varying the underlying layer during NDD synthesis using plasma-enhanced chemical vapor deposition (CVD).