The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation8 Plasma Electronics : 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[9p-N324-1~19]8.2 Plasma deposition of thin film, plasma etching and surface treatment

Tue. Sep 9, 2025 1:30 PM - 6:30 PM JST
Tue. Sep 9, 2025 4:30 AM - 9:30 AM UTC
N324 (Lecture Hall North)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-1]Effects of Atmospheric Pressure Low Temperature Air Plasma-Assisted Annealing
on Zinc Oxide Nanoparticles

〇Naoya Takagi1, Kawakami Retsuo1, Yanagiya Shin-ichiro1,2, Nakano Yoshitaka3, Niibe Masahito4 (1.Tokushima Univ, 2.pLED, Tokushima Univ., 3.Chubu Univ, 4.The Univ. of Tokyo)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-2]Effect of Argon Gas Pressure on the PL Emission Intensity of R. F. Plasma Treated PTFE

〇(B)Yoshiki Mogi1, Yuichiro Kuroki1 (1.Salesian Polytech)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-3]Control of Magnetic Field Distribution around the Cathode and AlCr Cathode Spot Motion in a High-Rate Filtered Arc Deposition System

〇Mirano Oneda1, Genki Sano1, Shogo Ochi1, Haru Sano1, Hirofumi Takikawa1, Hiroaki Sugita2, Takahiro Hattori2, Hiroki Gima2 (1.Toyohashi Univ. Technol., 2.OSG Corp.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-4]Pressure Change during Operation of High-Rate Filtered Arc Deposition System for TiN Film Preparation

〇Shogo Ochi1, Mirano Oneda1, Hirofumi Takikawa1, Hiroaki Sugita2, Takahiro Hattori2, Hiroki Gima2 (1.Toyohashi Univ. Technol., 2.OSG Corp.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-5]Identification of charge trapping regions in BN/Si structures

〇Naoki Oguchi1, Yuya Asamoto1, Masao Noma2, Shigehiko Hasegawa3, Michiru Yamashita4, Keiichiro Urabe1, Koji Eriguchi1 (1.Kyoto Univ., 2.SHINKO SEIKI. Co., LTD., 3.Osaka Univ., 4.Hyogo Pref. Inst. Technol.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[9p-N324-6]Effect on the Internal Stress of GaN thin films deposited by reactive HiPIMS

〇(M1)Koki Karikomi1, Koo Bando2, Mirei Tokiwa2, Yoshihiro Ueoka2, Misaki Hidehiko2, Mesuda Masami2, Shimizu Tetsuhide1 (1.Tokyo Metropolitan Univ., 2.Tosoh Corp.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[9p-N324-7]Application of multi-short HiPIMS to DLC film deposition and
its optical emission spectroscopy

〇Kaito Ishikawa1, Kenta Ozeki1, Takashi Kimura1 (1.Nagoya Inst. Tech.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[9p-N324-8]Preparation of Vanadium Oxide Film by HiPIMS with Superimposed Low-Power Pulsed Sputtering and Optical Emission Spectroscopy

〇Jumpei Kinugawa1, Shunsuke Ando1, Takeru Korenaga1, Takashi Kimura1 (1.Nagoya Inst. Tech.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[9p-N324-9]Quantitative Evaluation of Momentum Transfer by Heavy Mass Ion bombardment using HiPIMS Synchronized Pulsed Substrate Bias

〇(M1)Rina Watabe1, Fuka Nishimura1, Erdong Chen1, Tetsuhide Shimizu1 (1.Tokyo Metropolitan Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[9p-N324-10]Control of MoSX Anode Films by Sputtering and Their Application to Li-ion Batteries

〇Koki Sakaguchi1, Yoshiyuki Hasegawa1, Tatuo Ueda1, Keigo Terada1, Daiki Fujikake1, Ryota Murase1, Ryosuke Yamazaki1, Giichiro Uchida1,2 (1.Meijo Univ., 2.Ene.Inst.Meijo Univ.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-11]Highly efficient formation of Si thick film anodes for lithium-ion batteries using atmospheric pressure PECVD

〇Koki Hiromoto1, Afif Hamzens1, Farrel Dzaudan Naufal1, Koki Enomoto1, Hiromasa Ohmi1, Hiroaki Kakiuchi1 (1.Univ. Osaka)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-12]Effect of first growth layer in nitrogen-doped diamond film synthesis by a two-step process using plasma-enhanced chemical vapor deposition

〇(M1C)Yuto Yonehara1, Keigo Takeda1, Mineo Hiramatsu1 (1.Meijo Univ.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-13]Formation process of antireflection coatings for transparent substrates using armospheric-pressure VHF plasma

〇Naoto Mizusawa1, Uon Leapheng1, Yuki Ono1, Hiromasa Ohmi1, Hiroaki Kakiuchi1 (1.Univ. Osaka)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-14]Enhanced Photocatalytic Activity Induced by Plasmon Resonance of Au Nanoparticles in TiO2/Au/TiO2/Au Multilayer Structures

〇Tomoya Inoue1, Yuki Miyaji1, Retsuo Kawakami1, Shin-ichiro Yanagiya1,2, Akihiro Shirai2,3, Pankaj Koinkar1, Akihiro Furube1,2, Yoshitaka Nakano4, Masahito Niibe5 (1.Tokushima Univ., 2.pLED, Tokushima Univ., 3.Tokushima University, 4.Chubu Univ., 5.The Univ. of Tokyo)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-15]Investigation of structural changes in gate stack interfaces induced by post-radical treatment for nanosheet channel transistors

〇Mizuki Yano1, Honoka Kido1, Ryoma Yukiya1, Hiroki Kondo1 (1.Kyushu Univ. ISEE)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-16]Effect of nitrogen radical post-treatment on degradation of high-k gate dielectrics induced by constant current stress

〇(M1)Honoka Kido1, Mizuki Yano1, Ryoma Yukiya1, Hiroki Kondo1 (1.Kyushu Univ. ISEE)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[9p-N324-17]Evaluation of Plasma-Induced Damage to PE-CVD SiO2 Films by Polarity-Dependent Leakage Current Measurement

〇(M1)Kei Seki1, Shunya Kuronuma1, Keiichiro Urabe1, Koji Eriguchi1 (1.Kyoto Univ.)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[9p-N324-18]Plasma-induced defects ~Aspect-ratio effects in contact hole etch~

〇Shota Nunomura1, Takuya Kikuchi2, Haruka Suzuki2, Hirotaka Toyoda2 (1.AIST, 2.Nagoya Univ.)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[9p-N324-19]Plasma-induced defects ~cryogenic HF plasma etching of SiO2~

〇Shota Nunomura1, Yusuke Imai2, Shih-Nan HSIAO2, Takayoshi Tsutsumi2, Masaru Hori2 (1.AIST, 2.Nagoya Univ.)
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