[9p-N324-1~19] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-15] Investigation of structural changes in gate stack interfaces induced by post-radical treatment for nanosheet channel transistors

〇Mizuki Yano¹, Honoka Kido¹, Ryoma Yukiya¹, Hiroki Kondo¹ (1.Kyushu Univ. ISEE)

Keywords:

Gate stack structure,Nitrogen radicals,Post-deposition treatment

As a method for controlling elemental profiles in metal gate/high-k gate stacks for the nanosheet transistor generation, we investigated the effects of post-deposition treatment using neutral radicals with ion species eliminated. Nitrogen radical treatment applied to a TiN/HfO₂/SiO₂/Si structure led to a reduction in the HfSiO-related peak in the Si 2p _3/2 spectra. Meanwhile, no significant increase in the saturation capacitance was observed, suggesting that nitrogen radicals introduced from the TiN surface induced structural changes in the HfSiO/SiO₂ stacked layers.