[9p-N324-1~19] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N324-16] Effect of nitrogen radical post-treatment on degradation of high-k gate dielectrics induced by constant current stress

〇(M1)Honoka Kido¹, Mizuki Yano¹, Ryoma Yukiya¹, Hiroki Kondo¹ (1.Kyushu Univ. ISEE)

Keywords:

nitrogen radical,leakage current,breakdown

To improve reliability of Si nanosheet transistors, effects of nitrogen radical post-treatment on gate leakage current and degradation of gate dielectrics in MOS transistors were investigated. By using the nitrogen radical treatment after the deposition of metal gate electrodes, the variation in the initial leakage current of the MOS capacitor (TiN/HfSiO/SiO₂/Si) was reduced, and the amount of charge injected until dielectric breakdown was increased by constant current stress. Since no increase in the gate dielectric film was observed, the defects in the films were effectively terminated.