Presentation Information
[9p-P09-17]Measurement of the surface distribution of oxygen atoms above a substrate irradiated by low pressure inductively coupled plasma
〇(M2)Shohei Nanya1, Keigo Takeda1 (1.Meijo Univ.)
Keywords:
oxygen atom,surface reaction,silicon substrate
In this study, under conditions in which oxygen (O) atoms generated by an inductively coupled plasma (ICP) continuously irradiate a silicon substrate, we measured the absolute density distribution of O atoms perpendicular to the substrate surface using vacuum ultraviolet absorption spectroscopy (VUVAS)[2]. These experiments were conducted with applications in semiconductor wafer processing—such as photoresist removal and oxide-film formation—in mind, and aim to provide new insights into the surface reaction mechanisms at the plasma–material interface.