Presentation Information
[14a-K103-6]Coherent control of a hole spin in a FDSOI quantum dot with self-aligned gates
〇Yusuke Sato1, Sayyid Ibad1, Itaru Yanagi2, Toshiyuki Mine2, Ryuta Tsuchiya2, Digh Hisamoto2, Hiroyuki Mizuno2, Raisei Mizokuchi1, Jun Yoneda1,3, Tetsuo Kodera1 (1.Science Tokyo, 2.R&D Group, Hitachi Ltd., 3.UTokyo)
Keywords:
Silicon quantum dot,Hole spin,Rabi oscillation
Silicon hole spins are promising candidates for realizing qubits as they enable fast spin manipulation without additional structures. In this research, we demonstrate coherent control of a hole spin in a quantum dot fabricated using fully depleted silicon-on-insulator (FDSOI), which is beneficial for scaling to large-scale qubits, and self-aligned technology that enables the formation of finer gates. These results confirm the potential of hole spin qubits in this structure.
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