[14a-K502-1~8] 6.3 Oxide electronics

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14a-K502-3] Electronic phase transition of Solid-state synthesized V₂O₃ films

〇Yuki Kinoshita¹, Shunya Asaoka¹, Takuto Soma¹, Kohei Yoshimatsu¹, Akira Ohtomo¹ (1.Science Tokyo)

Keywords:

Transition metal oxide,Metal Insulator transition,Solid-state synthesis

It is known that the resistivity of bulk V₂O₃ shows a large change ratio of 10⁸ times before and after the metal-insulator transition, but in thin films, it decreases by 10³ to 10⁴ times, which is a problem for the application to Mott transistor devices. We attribute this decrease to the compressive strain near the thin film/substrate interface, and succeeded in fabricating a thin film with a resistivity change of 1.7×10⁶ times by using Solid-phase synthesis. We also compared the skewness of the 2θ/ω scan of the X-ray diffraction measurement between Direct synthesis method, which is usually used, and Solid-phase synthesis method. As a result, we found that the compressive strain near the thin film/substrate interface was reduced.