[14a-K507-1~9] CS.5 Code-sharing Session of 6.5 & 7.5

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14a-K507-6] Cooperative oxidation reaction at dangling bond sites of Si(001) surface and interface

〇Yuki Okabe¹, Yasutaka Tsuda², Hengyu Wen¹, Akitaka Yoshigoe², Yuji Takakuwa^2,3, Shuichi Ogawa¹ (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)

Keywords:

Si thermal oxidation,real time XPS,surface reaction

In this study, we observe the Si(001) surface oxidation process in real time by XPS to clarify the competing oxidation reaction pathways at the dimer and vacancy: ins/ins and tri/ad in Loop A and tri/tri and tri/ad pairs in Loop B are observed to occur by O₂ dissociative adsorption, and the oxygen adsorption orientations O₂ adsorption orientation also distinguishes Loop A from Loop B.