Presentation Information
[14a-K507-7]Initial oxidation rate deceleration and self-acceleration in Si(111) surface oxidation
Hengyu Wen1, Yasutaka Tsuda2, Yuki Okabe1, Akitaka Yoshigoe2, Yuji Takakuwa2,3, 〇Shuichi Ogawa1 (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)
Keywords:
Si thermal Oxidation,Real-time XPS,surface reaction
In this study, we investigate the reaction mechanism of rapid deceleration/self-acceleration based on the information of oxygen adsorption orientation in addition to the changes of film thickness, oxidation rate, Si oxidation state, strained Si atoms, and band bending from the real-time XPS observation of Si(111) surface oxidation.
Since the ins of oxygen adsorption orientation decreases and tri/ad increases in the self-accelerated oxidation region, we propose an O2 dissociative adsorption model in which the volume expansion and heat of adsorption due to Si oxidation cause point defect generation in the primary reaction and Si-O bond breaking in the secondary reaction, resulting in the appearance of unbonded hands.
Since the ins of oxygen adsorption orientation decreases and tri/ad increases in the self-accelerated oxidation region, we propose an O2 dissociative adsorption model in which the volume expansion and heat of adsorption due to Si oxidation cause point defect generation in the primary reaction and Si-O bond breaking in the secondary reaction, resulting in the appearance of unbonded hands.
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