Presentation Information
[14a-K507-8]Reaction rate enhancement of SiO2/Si(001) interface oxidation by switchng O2 exposure ON-OFF
〇Yasutaka Tsuda1, Akitaka Yoshigoe1, Yuki Okabe2, Hengyu Wen2, Shuichi Ogawa2, Yuji Takakuwa1,3 (1.JAEA, 2.Nihon univ., 3.Tohoku univ.)
Keywords:
silicon,oxidation,X-ray photoemission spectroscopy
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