Presentation Information

[14a-K507-8]Reaction rate enhancement of SiO2/Si(001) interface oxidation by switchng O2 exposure ON-OFF

〇Yasutaka Tsuda1, Akitaka Yoshigoe1, Yuki Okabe2, Hengyu Wen2, Shuichi Ogawa2, Yuji Takakuwa1,3 (1.JAEA, 2.Nihon univ., 3.Tohoku univ.)

Keywords:

silicon,oxidation,X-ray photoemission spectroscopy


Comment

To browse or post comments, you must log in.Log in