[14a-P01-1~43] 2 Ionizing Radiation (Poster)

[14a-P01-32] Electron beam thermal diffusion doping for pn junction formation on CdTe

〇Yuki Shinmura¹, Kagemitsu Inaba², Junichi Nishizawa⁴, Katsuyuki Takagi³, Hiroki Kase^1,3, Tetsu Ito^2,3, Toru Aoki^1,2,3,4 (1.Shizuoka Univ., 2.Shizuoka Univ. G.S.I.S.T., 3.Shizuoka Univ. R.I.E., 4.Shizuoka Univ. M.P.)

Keywords:

CdTe

CdTe has high sensitivity and room temperature operation as a radiation detector, but pn junctions are necessary to suppress leakage currents associated with high voltages.Conventional laser doping is difficult to control and poses challenges.In this study, experiments were conducted using a CdTe crystal structure with In deposited on one side and Au on the other side, and pn junctions were formed by electron beam doping to confirm diode characteristics.However, the resolution of the γ spectrum was low, which was assumed to be due to inhomogeneous electric field distribution.