[14a-P01-1~43] 2 Ionizing Radiation (Poster)

[14a-P01-36] Study on the internal structure of organic semiconductor radiation sensor using image processing

〇Zhaobo Wang¹, Eri Miyata¹, Erika Fukasawa², Hitoshi Miyata³, Kiyoshi Hayasaka^3,4, Masaaki Katsumata⁵, Hiroaki Ono⁶, Minori Watanabe⁶, Eisuke Saito⁷, Yoshiaki Seino⁸, Akinori Umeyama⁹, Makoto Sato⁹, Takahito Suzuki⁹, Masaaki Tamura⁹ (1.Ashikaga Univ., 2.NIT,Gunma Col., 3.Niigata Univ., 4.KEK, 5.Kanagawa P.H., 6.Nippon Dental Univ., 7.NIT,Nagano Col., 8.NIT,Toyama Col., 9.Japan Carlit Co. Ltd.)

Keywords:

organic semiconductor,radiation detector,image processing

Inorganic semiconductor radiation detectors have problems such as limited design flexibility and high cost. To solve these problems, we developed an organic semiconductor radiation sensor by combining an n-type titanium oxide (TiO2) semiconductor as an additive with a p-type polyaniline (PANI) semiconductor. The sensor is expected to achieve high detection efficiency because of the efficient creation of electron-hole pairs due to the presence of a wide junction interface. In this study, we report on the internal structure and detection efficiency of the sensor due to the different mixing methods in fabrication.