[14p-K301-1~18] 17.3 Layered materials

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[14p-K301-6] Domain wall photovoltaic effect in SnS crystals with ferroelectric domains

〇Ryo Nanae¹, Satsuki Kitamura¹, Kaito Kanahasji¹, Tomonori Nishimura¹, Redhwan Moqbel², Kung-Hsuan Lin², Jui-Han Fu¹, Vincent Tung¹, Kosuke Nagaship¹ (1.UTokyo, 2.Academia Cinica)

Keywords:

semiconductor,ferroelectric,2D-material

Ferroelectrics are a group of materials with reversible spontaneous polarization and generally form ferroelectric domains. The bulk photovoltaic effect (BPVE) in oxide ferroelectrics has been studied for a long time. It can be classified into two categories: the shift current originating from non-centrosymmetry in the domains and the domain wall (DW) photovoltaic effect. For the latter, two origins have been proposed: the potential drop at the DW under illumination and the electronic polarization in the DW.
BPVEs have been extensively studied in 2D materials with smaller bandgap and higher optical absorption efficiency than oxide pyroelectrics, but few studies have been on DWs.
In this study, we identified the DW structure and verified the photovoltaic effect in multi-domain SnS crystals with twin boundaries.