[14p-K301-1~18] 17.3 Layered materials

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[14p-K301-9] Controlling E_i of Nb dopant in MoS₂ by increasing environmental k

〇Kosuke Nagashio¹, Ryo Kawaguchi¹, Mian Wei¹, Kaito Kanahashi¹, Tomonori Nishimura¹ (1.UTokyo)

Keywords:

2D material,MoS2,PL

In this study, we attempted to control the ionization energy Ei of Nb by changing the environmental dielectric constant through the selection of various insulating films above and below Nb-doped MoS2.