[14p-K303-1~13] 10.2 Fundamental and exploratory device technologies for spin

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)English Presentation

[14p-K303-11] Investigation on the current induced domain-wall motion in Pt/GdFe wires for thinner GdFe region

〇Masaaki Tanaka¹, Takuto Sakamoto¹, Toshiki Tokuyama¹, Hirofumi Tozuka¹, Syuta Honda², Hiroyuki Awano³, Ko Mibu¹ (1.Nagoya Inst. Tech., 2.Kansai Univ., 3.Toyota Tech. Inst.)

Keywords:

Spintronics,Current induced domain-wall movement

Electric-current-induced movements of domain walls in magnetic wires are paid attention because of the curiosity from their potential as new spintronics devices. In this presentation, we show the domain-wall velocity on the GdFe/Pt wires with various thickness for a thinner region. It is found that the domain-wall velocity increases with an increase in the current, and the increase rate increases with a decrease in the GdFe film thickness. For the GdFe/Pt wires with the GdFe thicknesses over 10 nm, the rate of increase as a function of the current slows down, and the velocity does not increase above 1500 m/s. In contrast, for the wire with t = 8 nm, the velocity increased smoothly with increasing current, and a high velocity of more than 5000 m/s was observed. These findings demonstrate that ultrathin GdFe films with the thicknesses below 10 nm enable high-speed domain-wall movement.