[14p-K306-1~3] 15.7 Crystal characterization, impurities and crystal defects

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[14p-K306-2] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal/
2-nd generation (26) LVM IR absorption of shallow thermal donor

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ. Radiation Research center)

Keywords:

silicon crystal,nitrogen,infrared absorption

In 1968 shallow donors were found in annealed N-doped FZ Si. In 1986 5 electron transition absorptions were observed in CZ-Si and thermal behavior was reported. We examined LVM IR bands and found candidates at 714, 736, 841, 855, 862, 941, 945, 973, 1002, 1008, 1065 cm^-1. In 2005 we reported those at 855, 973 and 1002 cm^-1 and assigned 973 and 1002 cm^-1 as O(NO)O from O(NN)O like behavior. In 2007 theorists assigned 973 and 1002 cm^-1 as (NO)O and 855 cm^-1 as (ONO). We composed 5 models; (NO), (NO)O, O(NO), O(NO)O and (ONO). N-O-3, 4 and 5 remain after annealing at 800 ^oC, suggesting no O accompanies. N-O-3 thermal behavior deflects around 600 ^oC. We interpreted there are low-T and high-T types, and concluded 855 and 1065cm^-1 from O(NO) and 840 and 863 cm^-1 from (ONO). We examined high-T absorption at 714 cm^-1. In 2018 we reported it from irradiated and annealed NFZ samples. It must be (NO) originated. (NO)O may locate at higher frequency. 739cm^-1 absorption satisfies the requirements.