Session Details
[14p-K306-1~3]15.7 Crystal characterization, impurities and crystal defects
Fri. Mar 14, 2025 1:30 PM - 2:15 PM JST
Fri. Mar 14, 2025 4:30 AM - 5:15 AM UTC
Fri. Mar 14, 2025 4:30 AM - 5:15 AM UTC
K306 (Lecture Hall Bldg.)
Ayumi Hirano(Tohoku Univ.)
[14p-K306-1]Quality of silicon substrate and point defects: 2nd generation
(13) Effect of internal stress on point defects
〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research Center)
[14p-K306-2]High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal/
2-nd generation (26) LVM IR absorption of shallow thermal donor
〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research center)
[14p-K306-3]Measurement of carbon concentration in silicon crystal/ 2-nd generation
(30) Solution of inner phonon band problem in infrared absorption (2) Liquid N T measurement
〇Naohisa Inoue1, Shuichi Okuda1, Shuichi Kawamata1 (1.Osaka Metropolitan Univ. Radiation Research center)