[14p-K401-1~13] 15.4 III-V-group nitride crystals

1:00 PM - 1:45 PM JST(4:00 AM - 4:45 AM UTC)

[14p-K401-1] [INVITED] Current Status and Future Prospects for the Development of Light Emitting Synthesizers Using Nitride Semiconductors

〇Yoichi Kawakami¹ (1.Kyoto Univ.)

Keywords:

light emitting synthesizers,three dimensional structures,GaN-based semiconductors

The development of light emitting synthesizers that enable arbitrary spectral synthesis is attracting attention not only for next-generation lighting but also for applications in micro-displays and light-space wireless communication (Li-Fi). In order to realize it, our group has been developing multi-facet, microlens, and polyhedron methods in GaN-based three dimensional structures. In this presentation, we will introduce our achievements and discuss current issues and future prospects.