[14p-K401-1~13] 15.4 III-V-group nitride crystals

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K401-4] Investigation of the Optical Active Layer Thickness in c-Plane InGaN/GaN pin-Type Light-Emitting ad Receiving Diodes

〇Yuuho Andou¹, Shuhei Ichikawa^1,2, Hiroshi Tabata¹, Kazunobu Kojima¹ (1.Osaka Univ., 2.R.S. for UHVEM)

Keywords:

semiconductor,nitride,optical device

In recent years, optical wireless systems have attracted significant attention. Additionally, there is a growing demand for device miniaturization, multifunctionality, and higher integration density. In response, we proposed a pin-type InGaN/GaN light-emitting and -receiving diode (LERD) that integrates currently separate light source and photodetector devices. Based on one-dimensional Schrödinger-Poisson equation simulations, we investigated the optimal structure. As a result, it was found that the optimal structure is achieved when the thickness of the optical active layer is 16 nm.These results provide important design guidelines for realizing the operation of LERD.