[14p-K504-1~13] 3.8 Terahertz technologies

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K504-4] Analysis of optical gain mapping of GaN THz-QCL considering doping concentration of core layer

〇(B)Koki Yabe^1,2, Airu Takahashi^1,2, Akira Kaneko^1,2, Sachie Fujikawa^2,1, Hiroyuki Yaguchi², Krishan Kumar¹, Shashank Mishra¹, Hideki Hirayama¹ (1.RIKEN, 2.Saitama University)

Keywords:

quantum cascade laser,nitride semiconductor,Terahertz

We analyzed GaN/AlGaN THz-QCL to further improve the optical gain by compensating for band bending due to high doping concentration in the injection layer, and created an optical gain mapping. The analysis showed that the effect of band bending due to high doping concentration in the injection layer was reduced by optimizing the thickness of each layers, and the optimum doping concentration shifted to the high concentration side. This improved the optical gain, indicating the possibility of oscillation over a wide region above room temperature.