Presentation Information
[14p-P05-7]Electrical properties of AlGaN/GaN heterostructures anodized by forward bias and AlGaN/GaN heterostructures electrochemically energized by reverse bias
〇Ren Morita1, Riku Ando1, Shun Fukui1, Yoriko Suda1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
Keywords:
AlGaN/GaN hetero structure,Electrochemical,Nitride semiconductor
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