Session Details
[14p-P05-1~12]15.4 III-V-group nitride crystals
Fri. Mar 14, 2025 1:30 PM - 3:30 PM JST
Fri. Mar 14, 2025 4:30 AM - 6:30 AM UTC
Fri. Mar 14, 2025 4:30 AM - 6:30 AM UTC
P05 (Gymnasium)
[14p-P05-1]Elucidation of the atom mixing mechanism in AlN/GaN
〇(M1)Daiki Fujita1, Masato Oda1, Yoshihiro Kangawa2 (1.Wakayama Univ., 2.Kyushu Univ.)
[14p-P05-2]Growth of ordered nitride nanocolumns on the entire surface of a Si(100) nanoimprinted substrate via nanotemplate selective-area growth
〇Yugo Orima1, Kota Hoshino1, Rie Togashi1,2, Katsumi Kishino1,2 (1.Sophia Univ, 2.Sophia Nanotech)
[14p-P05-3]Fabrication of MicroLED film with step-less structure
〇Kazuto Matsui1, Ryota Kanda1, Atsushi Nishikawa2, Alexander Loesing2, Hiroto Sekiguchi1 (1.Toyohashi Tech., 2.ALLOS)
[14p-P05-4]Fabrication and Evaluation of AlGaN LED with p-AlGaN/n-ZnO Tunnel Junction Layer
〇(M2)Sonomi Kojima1, Shun Ukita1, Takeyoshi Tajiri1, Kazuo Uchida1 (1.UEC)
[14p-P05-5]Fabrication and characterization of UV sensors using AlGaN/GaN heterostructures
〇Sho Shirasu1, Ren Morita1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
[14p-P05-6]Study of Measuring Non-contact and Non-destructive Electrical Properties for AlGaN/GaN-HEMT using THz-TDSE
〇Takashi Fujii1,2, Taishin Yamada1, Toshiyuki Iwamoto2, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.PNP)
[14p-P05-7]Electrical properties of AlGaN/GaN heterostructures anodized by forward bias and AlGaN/GaN heterostructures electrochemically energized by reverse bias
〇Ren Morita1, Riku Ando1, Shun Fukui1, Yoriko Suda1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
[14p-P05-8]Electrical properties of n-GaN anodized by forward bias and n-GaN electrochemically energized by reverse bias
〇Riku Ando1, Ren Morita1, Ryuto Iura1, Zhaobei Li1, Yoriko Suda1, Gaku Kamio1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
[14p-P05-9]Growth of GaN layer by plasma-enhanced LPE method (III)
〇DAIKI HIROSE1, HARUKI NAKAGAWA1, SYUTO MINE1, KEISUKE YOSHIDA1, HIROYUKI SHINODA1, NOBUKI MUTSUKURA1 (1.Tokyo Denki Univ.)
[14p-P05-10]The electronic states of the gallium-nitrides with a point defect terminated by chlorine atoms
〇Yuma Yamagishi1, Tomoe Yayama1, Tohru Honda1 (1.Kogakuin Univ.)
[14p-P05-11]Hydrogen production using GaN nanocrystal photocatalysts fabricated by MOVPE
〇Hiroaki Jiroku1, Yosuke Kageshima2, Hiromasa Nishikiori2 (1.Seiko Epson Corp., 2.Shinshu Univ.)
[14p-P05-12]Study on crystal quality improvement in GaInN-based photovoltaic cells for optical wireless power transmission system
〇Sotaro Ishida1, Tomoki Kojima1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Inst. Tech.)