[14p-P05-1~12] 15.4 III-V-group nitride crystals

[14p-P05-8] Electrical properties of n-GaN anodized by forward bias and n-GaN electrochemically energized by reverse bias

〇Riku Ando¹, Ren Morita¹, Ryuto Iura¹, Zhaobei Li¹, Yoriko Suda¹, Gaku Kamio¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)

Keywords:

n-GaN,Electrochemical,Nitride semiconductor