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[14p-P08-20]Interface Modification in Achieving High-Performance and Suppressing Light-Induced Phase Stability for Inverted CsPbIBr2 Perovskite Solar Cells

〇(DC)Siliang Cao1,2, Md. Abdul Karim1, Shamim Ahmmed1,2, Md. Emrul Kayesh1, Takeaki Sakurai2, Ashraful Islam1 (1.NIMS, 2.Univ. of Tsukuba)
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Keywords:

CsPbIBr2 perovskite solar cells,Light-induced phase segregation,Operational stability

The volatile organic components challenge the thermal stability of hybrid organic-inorganic perovskite solar cells (PSCs), which typically deteriorate above 200°C. An inorganic alternative, CsPbIBr2, has garnered increasing attention for its superior thermal stability and wide bandgap (~2.1 eV), positioning it as a promising candidate for multi-junction photovoltaic (PV) cells1. However, inverted CsPbIBr2 devices still lag behind hybrid PSCs due to challenges such as poor carrier-selective layers and phase instability2. To address these issues, we proposed a straightforward dual-interface modification strategy: Embedding a self-assembled monolayer (SAM) on the nickel oxide (NiO) to form a buried interlayer with strong chemical bonds, while the insulating interface of the perovskite/solution-processed BCP reduced carrier recombination and passivated the perovskite surface. As a result, the modified SAM layer enhanced perovskite crystallinity and hole extraction. Together, these dual interfaces stabilize the SAM/absorber contact, refrained defective interfaces and moisture penetration, and suppressed halide segregation.

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