講演情報
[14p-P08-20]Interface Modification in Achieving High-Performance and Suppressing Light-Induced Phase Stability for Inverted CsPbIBr2 Perovskite Solar Cells
〇(DC)Siliang Cao1,2, Md. Abdul Karim1, Shamim Ahmmed1,2, Md. Emrul Kayesh1, Takeaki Sakurai2, Ashraful Islam1 (1.NIMS, 2.Univ. of Tsukuba)
キーワード：
CsPbIBr2 perovskite solar cells、Light-induced phase segregation、Operational stability
The volatile organic components challenge the thermal stability of hybrid organic-inorganic perovskite solar cells (PSCs), which typically deteriorate above 200°C. An inorganic alternative, CsPbIBr2, has garnered increasing attention for its superior thermal stability and wide bandgap (~2.1 eV), positioning it as a promising candidate for multi-junction photovoltaic (PV) cells1. However, inverted CsPbIBr2 devices still lag behind hybrid PSCs due to challenges such as poor carrier-selective layers and phase instability2. To address these issues, we proposed a straightforward dual-interface modification strategy: Embedding a self-assembled monolayer (SAM) on the nickel oxide (NiO) to form a buried interlayer with strong chemical bonds, while the insulating interface of the perovskite/solution-processed BCP reduced carrier recombination and passivated the perovskite surface. As a result, the modified SAM layer enhanced perovskite crystallinity and hole extraction. Together, these dual interfaces stabilize the SAM/absorber contact, refrained defective interfaces and moisture penetration, and suppressed halide segregation.