[15a-K301-1~11] 17.3 Layered materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[15a-K301-7] Modulation of Schottky Barrier in WSe₂ FET through Insulating Polymer Layer Insertion

〇(M1)Ryoichiro Naoi¹, Durgadevi Elamaran¹, Daisuke Kiriya¹ (1.The Univ. of Tokyo)

Keywords:

MOSFET

The Schottky barrier formed at the metal-semiconductor interface is expected to exhibit a barrier height that varies depending on the type of metal. However, in two-dimensional semiconductors, it is well-known that Fermi level pinning (FLP) occurs, resulting in a constant barrier height regardless of the metal used. In this study, we report on the potential modulation of the Schottky barrier in WSe₂ field-effect transistors by inserting an insulating polymer layer directly beneath the electrodes to mitigate FLP.