[15a-K303-1~10] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[15a-K303-8] Two-dimensional nitride MXenes for high-density magnetic memory devices

Prabhat Kumar¹, Yoshio Miura^1,2, Yoshinori Kotani³, Akiho Sumiyoshiya³, Tetsuya Nakamura^3,4, Shukla Gaurav¹, 〇Shinji Isogami¹ (1.NIMS, 2.KIT, 3.PhoSIC, 4.Tohoku U)

Keywords:

Two-dimensional material,Magnetic memory device,XMCD

In order to develop a new two-dimensional material, MXene, composed of light elements and transition metals, into a magnetic memory device, we have synthesized it by sputtering method with high quality and fabricated heterojunctions. The Cr₂N, simplest phase among MXene phases, was used as a model. Epitaxial growth was confirmed at room temperature, and the nitrogen did not decompose up to 650 °C. Cr spin polarization was detected by XMCD at the heterojunction interface with a Co ferromagnetic layer. Moreover, we confirmed the deterministic magnetization switching for the MXene-based devices with similar in-plane current density for the conventional heavy-metal/CoFeB systems.