[15a-K404-1~12] 12.2 Characterization and Materials Physics

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-K404-5] Observation of In-Gap States in SiO₂ Gate Insulators by Constant Final State Photoelectron Yield Spectroscopy

〇Renjiro Shibuya¹, Manato Tateno², Hirohiko Fukagawa³, Hisao Ishii^1,2,3,4 (1.F.ENG Chiba Univ., 2.GSSE Chiba Univ., 3.CFS Chiba Univ., 4.MCRA Chiba Univ.)

Keywords:

photoelectron spectroscopy,gate insulator,silicon dioxide

We measured the in-gap states of SiO₂ gate insulator using photoelectron spectroscopy. Ultraviolet photoelectron spectroscopy is commonly used for the evaluation of electronic states, but especially for SiO₂ with thicknesses used in practical devices, it is highly susceptible to sample charging effects, making measurements difficult. We attempted to observe the actual electronic states of a 100nm thick SiO₂ film using low-stray and low-energy light as the light source. Additionally, we irradiated the sample with an electron beam and measured the electronic states before and after charging, also attempting to observe electron trapping.