[15a-K503-1~9] 6.1 Ferroelectric thin films

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[15a-K503-4] Dependence of crystallinity and ferroelectricity on Sc content in thin (Al_1-xSc_x)N films

〇(D)Soshun Doko^1,2, Naoko Matsui¹, Toshikazu Irisawa¹, Koji Tsunekawa¹, Nana Sun², Yoshiko Nakamura², Kazuki Okamoto², Hiroshi Funakubo² (1.Canon ANELVA, 2.Science Tokyo)

Keywords:

AlScN,FeRAM,Ferroelectric thin films

(Al_1-xSc_x)N films, which exhibit good ferroelectricity, are attracting attention as a material for ferroelectric random access memory (FeRAM). In order to apply (Al_1-xSc_x)N films to FeRAM, it is important to reduce the total device thickness. We have previously succeeded in thinning the Pt bottom electrode and (Al_0.9Sc_0.1)N film to a total thickness of 35 nm. In this study, we evaluated the dependence of crystallinity and ferroelectricity on Sc content in thin (Al_1-xSc_x)N films.