Presentation Information
[15p-K301-10]In-plane tunneling FET operation using Nb-doped WSe2
〇Kaito Kanahashi1, Tomonori Nishimura1, Satoru Morito2, Keiji Ueno2, Kosuke Nagashio1 (1.U. Tokyo, 2.Saitama Univ.)
Keywords:
two-dimensional material,TFET,WSe2
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